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Publications 2000

  1. Recent advances in defect-selective etching of GaN
    J.L. Weyher, P.D. Brown, J.L. Rouviere, T. Wosinski, A.R.A. Zauner, I. Grzegory
    J. Crystal Growth 210, 151-156 (2000)
  2. Determination of polarity of GaN cross section TEM specimens using quantitative electron diffraction
    H.W. Zandbergen, J. Janssen, A.R.A. Zauner, J.L. Weyher
    J. Crystal Growth 210, 167-171 (2000)
  3. Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr,Ti)O3 thin films
    M.P. Moret, S.A. Rössinger, P.R. Hageman, M.A.C. Devillers, H. van der Linden, E. Haverkamp, P.K. Larsen, N. Duan
    Ferroelectrics 241, 149-158 (2000)
  4. High rate epitaxial lift off of InGaP  films from GaAs substrates
    J.J. Schermer, G.J. Bauhuis, P. Mulder, W.J. Meulemeesters, E.J. Haverkamp,M.M.A.J. Voncken, P.K. Larsen
    Appl. Phys. Lett. 76, 2131-2133 (2000)
  5. Physical properties of silicon doped hetero-epitaxial MOCVD grown GaN: Influence of doping level and stress
    P.R. Hageman, V. Kirilyuk, A.R.A. Zauner, G.J. Bauhuis, P.K. Larsen
    MRS Symp. Proc. Series 595, W5.9.1-W5.9.6 (2000)
  6. Homo-epitaxial growth on misoriented GaN substrates by MOCVD
    A.R.A. Zauner, J.J. Schermer, W.J.P. van Enckevort, V. Kirilyuk, J.L. Weyher, I. Grzegory, P.R. Hageman, P.K. Larsen
    (MRS-fall 1999, Boston, USA), MRS Symp. Proc. Series 595, W6.3.1-W6.3.6 (2000)
  7. Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities
    V. Kirilyuk, A.R.A. Zauner, P.C.M. Cristianen, J.L. Weyher, P.R. Hageman P.K. Larsen
    Appl. Phys. Lett. 76, 2355-2357 (2000)
  8. Analysis of peculiar structural defects created in GaAs by diffusion of copper
    C. Frigeri, J.L. Weyher, S. Müller, P. Hiesinger
    J. Crystal Growth 210, 177-181 (2000)
  9. Relations between gas phase CN radical distributions, nitrogen incorporation, and growth rate in flame deposited diamond
    R.L. Stolk, M.M.J.W. van Herpen, J.J. ter Meulen, J.J. Schermer
    J. Appl. Phys. 88, 3708-3716 (2000)
  10. Fine structure in magnetization of individual fluxoid states
    A.K. Geim, S.V. Dubonos, J.J. Palacios, I.V. Grigorieva, M. Henini, J.J. Schermer
    Phys. Rev. Lett. 85, 1528-1531 (2000)
  11. Chemical vapour deposition of diamond and nitrided chromium using an oxyacetylene flame
    J.G. Buijnsters, F.M. van Bouwelen, J.J. Schermer, W.J.P. van Enckevort, J.J. ter Meulen
    Diamond Relat. Mater. 9, 341-345 (2000)
  12. Effects of nitrogen impurities on the CVD growth of diamond: step bunching in theory and experiment
    F.K. de Theije, J.J. Schermer W.J.P. van Enckevort
    Diamond Relat. Mater. 9, 1439-1449 (2000)
  13. Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
    A.R.A. Zauner, J.L. Weyher, M. Plomp, V. Kirilyuk, I. Grzegory, W.J.P. van Enckevort, J.J. Schermer, P.R. Hageman, P.K. Larsen
    J. Crystal Growth 210, 435-443 (2000)
  14. Homo-epitaxial growth on misoriented GaN substrates by MOCVD
    A.R.A. Zauner, J.J. Schermer, W.J.P. van Enckevort, V. Kirilyuk, J.L. Weyher, I. Grzegory, P.R. Hageman, P.K. Larsen
    MRS Internet Journal of Nitride SemiconductorResearch 5S1, W6.3 (2000)
  15. Highly chemical reactive ion etching of gallium nitride and its influence on Schottky contacts
    F. Karouta, B. Jacobs, I. Moerman, C. Jacobs, J.L. Weyher, G. Nowak, R. Crane, P.R. Hageman
    MRS Symp. Proc. Series 595, W11.76 (2000)
  16. Highly chemical reactive ion etching of gallium nitride and its influence on schottky contacts
    F. Karouta, B. Jacobs, I. Moerman, K. Jacobs, J.L. Weyher, S. Porowski, R. Crane, P.R. Hageman
    MRS Internet Journal of Nitride Semiconductor Research 5S1, W11.76 (2000)
  17. Incorporation of Pb, Ti and Zr into MOCVD grown   PbZrxTi1-xO3 thin films
    S.A. Rössinger, M.P. Moret, S.I. Misat, P.R. Hageman, H. van der Linden, E. Haverkamp, W.H.M. Corbeek, P.K. Larsen
    Integrated Ferroelectrics 30, 71-79 (2000)
  18. High rate weight induced epitaxial lift-off for high efficiency III/V film solar cells
    G.J. Bauhuis, J.J. Schermer, P. Mulder, E.J. Haverkamp, M.M.A.J. Voncken, P.K. Larsen
    Proc. 16th European Solar Energy Conference, Glasgow, UK 1026 (2000)
  19. MOCVD growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates
    M.P. Moret, S.A. Rössinger, P.R. Hageman, S.I. Misat, M.A.C. Devillers, H. van der Linden, E. Haverkamp, W.H.M. Corbeek, P.K. Larsen
    Integrated Ferroelectrics 31, 305-314 (2000)
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