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Publications 2001

  1. Local probing of the polarization state in thin PZT films during polarization reversal
    E.D. Mishina, N.E. Sherstyuk, E.Ph. Pevtsov, K.A. Vorotilov, A.S. Sigov, M.P. Moret, S.A. Rössinger, P.K. Larsen, Th. Rasing
    Appl. Phys. Lett. 78, 796-798 (2001)
  2. Shallow-impurity-related photolunimescence in homoepitaxial GaN
    V. Kirilyuk, M. Zielinski, P.C.M. Christianen, A.R.A. Zauner, J.L. Weyher, P.R. Hageman, P.K. Larsen
    MRS Symp. Proc. Series 639, G6.23.1 (2001)
  3. Study of individual grown-in and indentation-induced dislocations in GaN by defect-delective etching and transmission electron microscopy
    J.L. Weyher, M. Albrecht, T. Wosinski, G. Nowak, H.P. Strunk, S. Porowski Mat. Sci. Eng. B80, 318-321 (2001)
  4. Electrochemical etching of highly conductive GaN single crystals
    G. Nowak, X.H. Xia, J.J. Kelly, J.L. Weyher and S. Porowski
    J. Chrystal Growth 222, 735-740 (2001)
  5. Selective photo-etching and transmission electron microscopy (TEM) study of defects in hetero-epitaxial GaN
    J.L. Weyher, F.D. Tichelaar, H.W. Zandbergen, L. Macht, P.R. Hageman
    J. Appl. Phys. 90, 6105-6109 (2001)
  6. Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates
    V. Kirilyuk, A.R.A. Zauner, P.C.M. Christianen, J.L. Weyher, P.R. Hageman, P.K. Larsen
    J. Chrystal Growth 230, 477-480 (2001)
  7. Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment
    S. Haffouz, V. Kirilyuk, P.K. Hageman, L. Macht, J.L. Weyher, P.K. Larsen Appl. Phys. Lett. 79,2390-2392 (2001)
  8. Investigation of optical and structural properties of GaN grown by hydride vapor-phase epitaxy
    V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, W.H.M. Corbeek, M. Zielinski, L. Macht, J.L. Weyher, P.K. Larsen
    phys. stat. sol. (a)188, 473-476 (2001)
  9. High quality GaN layers on Si(III) substrates: AIN buffer layer optimisation and insertion of a SiN intermediate layer
    P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, P.K. Larsen
     phys. stat. sol (a) 188, 523-526 (2001)
  10. Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment
    P.R. Hageman, S. Haffouz, V. Kirilyuk, L. Macht, J.L. Weyher, A. Grzegorczyk, P.K. Larsen
     phys. stat. sol. (a) 188, 659-662 (2001)
  11. Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
    V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, P.K. Larsen, M. Zielinski
    Appl. Phys. Lett. 79, 4109-4111(2001)
  12. Photoluminescence study of piezoelectric polarization in strained AlxGa1-xN/GaN single quantum wells
    V. Kirilyuk, P.R. Hageman, P.C.M. Christianen, F.D. Tichelaar, P.K. Larsen
    phys. stat. sol. (b) 228, 563-566 (2001)
  13. MOCVD PbZrxTi1-xO3  thin films on platinized silicon wafers and SrTiO3 crystals: Growth and optical properties
    M.P. Moret, M.A.C. Devillers, A.R.A. Zauner, E. Aret, P.R. Hageman, P.K. Larsen
    Integrated Ferroelectrics 36, 265-274 (2001)
  14. Compound Semiconductors: Characterization by Chemical Etching
    J.L. Weyher
    Encyclopedia of Materials: Science and Technology, Ed. S. Mahajan, Pergamon Press, Elsevier Science Ltd., pp. 1-9 (2001)
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