Publications 2002

  1. The effect of nitriding on the diamond film characteristics on chromium substrates
    J.G. Buijnsters, P. Shankar, W.J.P. van Enckevort, J.J. Schermer, J.J. ter Meulen
    Diamond Relat. Mater. 11, 1760-1768 (2002)

  2. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE
    M. Bokowski, I. Grzegory, S. Krukowski, B. ucznik, Z. Romanowski, M. Wróblewski, J. Borysiuk, J. Weyher, P. Hageman, S. Porowski
    J. Crystal Growth 246, 194-206 (2002)

  3. CVD diamond deposition on steel using arc-plated chromium nitride interlayers
    J.G. Buijnsters, P. Shankar, W. Fleischer, W.J.P. van Enckevort, J.J. Schermer, J.J. ter Meulen
    Diamond Relat. Mater. 11, 536-544 (2002)

  4. Defect-selective etching of GaN in a modified molten bases system
    G. Kamler, J.L. Weyher, I. Grzegory, E. Jezierska and T. Wosiski
    J. Crystal Growth 246, 21-24 (2002)

  5. Raman and cathodoluminescence study of dislocations in GaN
    H. Lei, H.S. Leipner, J. Schreiber, J.L. Weyher, T. Wosiski, I. Grzegory
    J. Appl. Phys. 92, 6666-6670 (2002)

  6. Direct influence of polarity on structural and electro-optical properties of hetero-epitaxial GaN
    L. Macht, J.L. Weyher, P.R. Hageman, M. Zielinski, P.K. Larsen
    J. Phys.: Condens. Matter 14, 13345-13350 (2002)

  7. Non-linear optical and electrostatic force microscopy for ferro-electric polarization imaging
    E.D. Mishina, N.E. Sherstyuk, K.A. Vorotilov, A.S. Sigov, R. Barberi, M.P. Moret, F. Manders, M.P. De Santo, P.K. Larsen and Th. Rasing
    Appl. Phys. B 74, 783-788 (2002)

  8. Growth of GaN epilayers on Si(111) substrates using multiple buffer layers
    P.R. Hageman, S. Haffouz, A. Grzegorczyk, V. Kirilyuk, P.K. Larsen
    MRS Symp. Proc. Series 693, I3.20.1. (2002)

  9. Photoreflectance study of GaN/AlGaN structures
    A. Wojcik, T. Piwonski, T.J. Ochalski, E. Kowalczyk, M. Bugajski, A. Grzegorczyk, L. Macht, P.K. Larsen
    Phys. stat. sol. (c) 0, 491-494 (2002)

  10. Structure and morphology of epitaxial PbZrO3, films grown by metalorganic chemical vapor deposition
    M.P. Moret, J.J. Schermer, F.D. Tichelaar, E. Aret, P.R. Hageman
    J. Appl. Phys. 92, 3947-3957 (2002)

  11. On the mechanism of <001> texturing during flame deposition of diamond
    J.J. Schermer, F.K. de Theije, W.A.L.M. Elst
    J. Crystal Growth 243, 302-318 (2002)

  12. Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process
    M.M.A.J. Voncken, J.J. Schermer, G. Maduro, G.J. Bauhuis, P. Mulder, P.K. Larsen
    Mater. Sci. Eng. B95, 242-248 (2002)

  13. Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope
    M. Albrecht, H.P. Strunk, J.L. Weyher, I. Grzegory, S. Porowski, T. Wosinski
    J. Appl. Phys. 92, 2000-2005 (2002)

  14. Tip formation of micrometer scale GaAs pyramid structures grown by MOCVD
    G.J. Bauhuis, P. Mulder, H. van Kempen
    J. Crystal Growth 240, 104-111 (2002)

  15. Optical properties of PbTiO3, PbZrxTi1-xO3, and PbZrO3 films deposited by metalorganic chemical vapor on SrTiO3
    M.P. Moret, M.A.C. Devillers, K. Wörhoff, P.K. Larsen
    J. Appl. Phys. 92, 468-474 (2002)

  16. Interplay between GaN and AIN sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy
    A.L. Alvarez, F. Calle, E. Monroy, J.L. Pau, M.A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnes, P. Gibart, P.R. Hageman
    J. Appl. Phys. 92, 223-226 (2002)

  17. Homo-epitaxial growth on the N-face of GaN single crystals: the influence of misorientation on the surface morphology
    A.R.A. Zauner, E. Aret, W.J.P. van Enckevort, J.L. Weyher, S. Porowski, J.J. Schermer
    J. Crystal Growth 240, 14-21 (2002)

  18. Complementary study of defects in GaN by photo-etching and TEM
    J.L. Weyher, L. Macht, F.D. Tichelaar, H.W. Zandbergen, P.R. Hageman, P.K. Larsen
    Mater. Sci. Eng. B91-92, 280-284 (2002)

  19. Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process
    A. Wojcik, T. Piwonski, T. J. Ochalski, E. Kowalczyk, M. Bugajsk, A. Grzegorczyk, L. Macht, S. Haffouz, P. K. Larsen
    Optica Applicata 32, 431 (2002)

  20. Growth of GaN epilayers on Si(111) substrates using multiple bufferlayers
    P.R. Hageman, S. Haffouz, A. Grzegorczk, V. Kirilyuk, P.K. Larsen
    Mat. Res. Soc. Symp.
    Proc. 693, I3.20.1 (2002)