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Publications 2003

  1. Influence of nitrogen addition on oxyacetylene flame chemical vapor deposition  of diamond as studied by solid state techniques and gas phase diagnostics
    R.L. Stolk, M.M.J.W. van Herpen, J.J. Schermer, and J.J. ter Meulen
    J. Appl. Phys. 93, 4909-4921 (2003)
  2. Characterization of GaN single crystals by defect-selective etching
    J.L. Weyher, L. Macht, G. Kamler, J. Borysiuk, I. Grzegory
    Phys. stat. sol. (c) 3, 21-26 (2003)
  3. Polarity dependent properties of GaN  layers grown by hydride vapor phase epitaxy on GaN bulk crystals
    F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P.R. Hageman, K. Saarinen
    Phys. stat. sol. (b) 240, 289-292 (2003)
  4. GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition
    P.R. Hageman, J.J. Schermer, P.K. Larsen
    Thin Solid Films 443, 9-13 (2003)
  5. Life-cycle assessment of photovoltaic modules: Comparison of mc-Si, InGaP and InGaP/mc-Si solar modules
    A. Meijer, M.A.J. Huijbregts, J.J. Schermer, L. Reijnders
    Prog. Photovolt. Res. Appl. 11, 275-287 (2003)
  6. The effect of nitrogen addition during flame deposition of diamond as studied by solid-state techniques
    R.L. Stolk, J.G. Buijnsters, J.J. Schermer, N. Teofilov, R. Sauer, M.J. Fransen J.J. ter Meulen
    Diamond Relat. Mater. 12, 1322-1334 (2003)
  7. Reactions of cis-2,3-dimethylaziridine, 3-pyrroline and pyrrolidine with Me3Ga: Adducts and dimeric amides
    Y. Zhang, P.H.M. Budzelaar, J.M.M. Smits, R. de Gelder, P.R. Hageman, A.W. Gal
    Eur. J. Inorg. Chem. 656-665 (2003)
  8. Proceedings of the Review Conference on the scientific cooperation between Austria and Poland
    S. Krukowski, I. Grzegory, M. Bockowski, Z. Romanowski, M. Wroblewski, J. Weyher, J. Borysiuk, S. Porowski
    Crystal Growth and Epitaxy (October 20-24, 2002, Vienna)
    Ed. M.A. Herman, PAN pp. 33-46 (2003)
  9. Luminsescence  decay  in highly excited GaN grown by hydride vapor-phase epitaxy
    S. Juršenas, S. Miasojedovas, G. Kurilik, A. ukauskas, and P.R. Hageman
    Appl. Phys. Lett. 83, 66-68 (2003)
  10. Thick GaN layers grown by hydride vapour-phase epitaxy: hetero-  versus homo-epitaxy
    P.R. Hageman, V. Kirilyuk, W.H.M. Corbeek, J.L. Weyher, B. Lucznik, M. Bockowski, S. Porowski, S. Müller
    J. Crystal Growth 255, 241-249 (2003)
  11. Damage after annealing and aging at room temperature of platinized silicon substrates
    M.P. Moret, M.A.C. Devillers, F.D. Tichelaar, E. Aret, P.R. Hageman, P.K. Larsen
    Thin Solid Films 434, 283-295 (2003)
  12. Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si(111) substrates
    S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennéguès, E.W.J.M. van der Drift, P.K. Larsen
    J. Crystal Growth 248, 568-572 (2003)
  13. Diffusion-modified boride interlayers for chemical vapour deposition of low-residual-stress diamond films on steel  substrates
    J.G. Buijnsters, P. Shankar, P. Gopalakrishnan, W.J.P. van Enckevort, J.J. Schermer, S.S. Ramakrishnan, J.J. ter Meulen
    Thin Solid Films 426, 85-93 (2003)
  14. The applicability of ultra thin silicon films as interlayers for CVD diamond deposition on steels
    J.G. Buijnsters, P. Shankar, W.J.P. van Enckevort, J.J. Schermer, and J.J. ter Meulen
    Phys. stat. sol. (a) 195, 383-395 (2003)
  15. Selective etching and  complementary microprobe technique
    J.L. Weyher, C. Frigeri, and S. Müller
    Microprobe characterization of optoelectronic materials, Ed. J. Jimenez, Taylor and Francis, New York-London
    Chapter 8 595-690 (2003)
  16. Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate
    S. Haffouz, P.R. Hageman, V. Kirilyuk, L. Macht, J.L. Weyher, P.K. Larsen Mater. Sci. Eng. B97, 9-12 (2003)
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