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Publications 2004

  1. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
    S. Juršenas, S. Miasojedovas, G. Kurilik, A. Zukauskas, P.R. Hageman
    Physica Status Solidi (c) 201 (2004) 199-202
  2. The adhesion of hot-filament CVD diamond films on AISI type 316 austenitic stainless steel
    J.G. Buijnsters, P. Shankar, W.J.P. van Enckevort, J.J Schermer, .J.J. ter Meulen
    Diamond and Related Materials 13 (2004) 848-857
  3. n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
    P.R. Hageman, W.J. Schaff, J. Janinski , Z. Lilienthal-Weber
    J. Crystal Growth, 267 (2004), 123-128
  4. The effect of HVPE reactor geometry on GaN growth rate – experiments versus simulations
    C.E.C. Dam, A.P. Grzegorczyk, P.R. Hageman, R. Dorsman, C.R. Kleijn , P.K. Larsen
    J. Crystal Growth, 271 (2004), 192-199
  5. Influence of base thickness on the light-trapping properties of thin film GaAs solar cells
    G.J. Bauhuis, P. Mulder, J.J. Schermer, M.M.A.J. Voncken , P.K. Larsen
    Solar Energy Materials and Solar Cells, 83 (2004), 81-90
  6. Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process
    M.M.A.J Voncken, J.J.
    Bauhuis Schermer, G.J., P. Mulder , P.K. Larsen
    Appl. Phys. A, 79 (2004), 1801-1808
  7. Strain-accelerated HF etching of AlAs for epitaxial lift-off
    M.M.A.J. Voncken, J.J. Schermer, G.J. Bauhuis, A.T.J. van Niftrik , P.K. Larsen
    J. Phys.: Condens. Matter 3, 16 (2004), 3585-3596
  8. Parameter study of intrinsic carbon doping of AlxGa1-xAs by MOCVD
    J. van Deelen, G.J. Bauhuis, J.J. Schermer , P.K Larsen
    J. Crystal Growth, 271 (2004), 376-384
  9. Microstructure characterisation of titanium dioxide nanodispersions and thin films for dye-sensitized solar cell devices
    P. de Almeida, J. Catry van Deelen, C. , H. Sneyers, T. Pataki, R. Andriessen, C. van Roost , J. M. Kroon
    Appl. Phys. A., 79 (2004), 1819-1828
  10. Nanopipes in GaN: photo-etching and TEM study
    S. Lazar, J.L. Weyher, L. Macht, F.D. Tichelaar , H.W. Zandbergen
    Eur. Phys. Appl. Phys, 27 (2004), 275-278
  11. TEM study of nanopipes in hetero-epitaxial GaN
    E. Jezierska, J.L. Weyher, M. Rudzinski , J. Borysiuk
    Eur. Phys. Appl. Phys, 27 (2004), 255-258
  12. Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures
    G. Kamler, J. Borysiuk, J.L Weyher, A. Presz, M. Wozniak , I Grzegory
    Eur. Phys. Appl. Phys, 27 (2004), 247-249
  13. Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods.L. Weyher
    Eur. Phys. Appl. Phys., 27 (2004), 37-41
  14. Low dislocation density, high power InGaN laser diodes
    P. Perlin, M. Leszczynski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Krysko, M. Sarzynski, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Swietlik, I. Grzegory, M. Bockowski, B. Lucznik, S. Porowski, L Gorczyca, A. Bering, W. Krupczynski, I. Makarowa, R. Wisniewska , A. Libura
    J. Nitride Semicond, 9 (2004), Article 3
  15. NMR investigation of atomic ordering in AlxGa1-xAs thin films
    C. Degen, M. Tomasselli, B.H. Meier, M.M.A.J. Voncken , A.P.M Kentgens
    Physical Review B, 69 (2004), 193303-1-4

Articles in Proceedings:

  1. Castagne, Submicron holes on GaN by photo-electrochemical wet etching
    P. Gall-Borrut, J.L. Weyher, S. Lazar, P. Falgayrettes, L. Nativel, and M. Proceedings 4th Euspen International Conference, Glasgow, Scotland UK
    May-June 2004, pp 35-36.
  2. Influence of base thickness on front and back side efficiency of thin film GaAs solar cells
    G.J. Bauhuis, P. Mulder, J.J. Schermer, M.M.A.J. Voncken, and P.K. Larsen
    Proceedings of 3rd World Conference on Photovoltaic Energy Convention, Osaka, Japan
    11-18 May 2003, CD-Rom ISBN 4-9901816-3-8.
  3. A study of AlAs etching in HF for epitaxial lift-off III-V solar cells
    M.M.A.J. Voncken, A.T.J. van Niftrik, J.J. Schermer, G.J. Bauhuis, P. Mulder, J. van Deelen, P.K. Larsen
    Proceedings of  19th European Photovoltaic Solar Energy Conference, Paris, France
    7-11 June 2004, pp. 169-172.
  4. Parameter study of intrinsic carbon doping of AlxGa1-xAs for tunnel junctions in tandem solar cells
    J. van Deelen, G.J. Bauhuis, P. Mulder, J.J. Schermer, and P.K. Larsen
    Proceedings of  19th European Photovoltaic Solar Energy Conference, Paris, France
    7-11 June 2004, pp. 3704-3707.
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