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Publications 2005

  1. Defects in GaN single crystals and homoepitaxial structures
    J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory, S. Porowski
    Journal of Crystal Growth 281 (2005) 135-142
  2. Defect-selective etching of SiC
    J.L. Weyher, S. Lazar, J. Borysiuk, J. Pernot
    Physica Status Solidi a Applications and Materials Science 202 (2005) 578-583
  3. Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study
    C.E.C. Dam, P.R. Hageman, P.K. Larsen
    Journal of Crystal Growth 285 (2005) 31-40
  4. Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC
    T.J. Ochalski, A. Grzegorczyk, M. Rudzinski, P.K. Larsen, P.O. Holtz, P. Bergman,  P.P. Paskov
    Physica Status Solidi a-Applications and Materials Science 202 (2005) 1300-1307
  5. Influence of the substrate misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD
    P.R. Hageman M. Rudzinski, A.P. Grzegorczyk, L. Macht, T.C. Rodle, H.F.F. Jos, P.K. Larsen
    Physica Status Solidi (c) 2 (2005) 2141-2144
  6. Resistivity control of unintentionally doped GaN films
    A.P. Grzegorczyk, L. Macht, P.R. Hageman, M. Rudzinski , P.K. Larsen
    Physica Status Solidi (c) 2 (2005) 2113-2116
  7. Pitting corrosion behaviour of diamond coated tool steel
    J.G. Buijnsters, R.V.S. Rao, P. Shankar, W. J. P. van Enckevort, J.J. Schermer, A. Gebert, J.J. ter Meulen
    Surface & Coatings Technology 191 (2005) 119-126
  8. Adhesion analysis of polycrystalline diamond films on molybdenum by means of scratch, indentation and sand abrasion testing
    J.G. Buijnsters, P. Shankar, W.J.P. van Enckevort, J.J. Schermer , J.J. ter Meulen
    Thin Solid Films 474 (2005) 186-196
  9. Growth of AlN, GaN and InN from the solution
    S. Krukowski, I. Grzegory, M. Bockowski, B. Lucznik, T. Suski, G. Nowak, J. Borysiuk, M. Wroblewski, M. Leszczynski, P. Perlin, S. Porowski , J.L. Weyher
    International Journal of Materials & Product Technology 22 (2005) 226-261
  10. An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology
    L. Macht, J.J. Kelly, J.L. Weyher, A. Grzegorczyk, P.K. Larsen
    Journal of Crystal Growth 273 (2005) 347-356
  11. Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
    A.P. Grzegorczyk, L. Macht, P.R. Hageman, J.L. Weyher, P.K. Larsen
    Journal of Crystal Growth 273 (2005) 424-430
  12. Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
    F. Tuomisto, K. Saarinen, B. Lucznik, I. Grzegory, H. Teisseyre, T. Suski, S. Porowski, P.R. Hageman, J. Likonen
    Applied Physics Letters 86 issue 3 (2005) 031915/1-3
  13. Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD
    A.P. Grzegorczyk, P.R. Hageman, J.L. Weyher, P.K. Larsen
    Journal of Crystal Growth 283 (2005) 72-80
  14. Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs
    J. van Deelen, G.J. Bauhuis, J.J. Schermer, P.K. Larsen
    Journal of Crystal Growth 284 (2005) 28-38
  15. Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates
    L. Macht, P.R. Hageman, S. Haffouz, P.K. Larsen
    Applied Physics Letters 87 (2005) 131904
  16. Thin-film GaAs epitaxial life-off solar cells for space applications
    J.J. Schermer, P. Mulder, G.J. Bauhuis, P.K. Larsen, G. Oomen, E. Bongers
    Progress in Photovoltaics 13 (2005) 587-596
  17. Photoreflectance investigations of a donor-related transition in AlGaN/GaN transistor structures
    R. Kudrawiec, M. Syperek, J. Misiewicz, M. Rudzinski, A.P. Grezegorczyk, P.R. Hageman, P.K. Larsen
    Applied Physics Letters 87 153502 (2005)
  18. Revealing of defects in CdTe crystals by DSL etching
    F. Bissoli, J.L. Weyher, A. Zappettini, M. Zha, L. Zanotti
    Crystal Research and Technology 40 (2005) 1060-1063
  19. Electrochemistry and etching of wide bandgap chemically resistant semiconductors
    L. Macht, J.J. Kelly, D.H. van Dorp, M.R. Kooijman, J.L. Weyher
    Electrochem. Society Proceedings 4 (2005) 138-146
  20. Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
    L. Macht, J. L. Weyher, A. Grzegorczyk, P. K. Larsen
    Physical Review B 71 (2005) 073309
  21. Epitaxial Lift-Off for large area thin film III/V devices
    J.J. Schermer, P. Mulder, G.J. Bauhuis, M.M.A.J. Voncken, J. van Deelen, E. Haverkamp, P. K. Larsen
    Physica Status Solidi a-Applications and Materials Science 202 (2005) 501-508
  22. Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
    G. Kamler, J. Borysiuk, J.L. Weyher, R. Czernecki, M. Leszczynski, I. Grzegory, S. Porowski
    Journal of Crystal Growth 282 (2005) 45-48
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