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Publications 2006

  1. Quantitative analysis of variant III CuAu-I-type ordering of AlxGa1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction
    A.T.J. van Niftrik, G.J. Bauhuis, J.J. Schermer, H.J. Kim, M.M.A.J.  Voncken, P. Mulder, P.K. Larsen
    Journal of Crystal Growth 289 (2006) 48-54
  2. Synchrotron radiation study of order in AlxGa1-xAs
    A.T.J. van Niftrik, G.J. Bauhuis, J.J. Schermer, H.J. Kim, M.M.A.J. Voncken, P. Mulder, P.K. Larsen
    Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 246 (2006) 96-100
  3. Method for HVPE growth of thick crack-free GaN layers
    C.E.C. Dam, A.P. Grzegorczyk, P.R. Hageman, P.K. Larsen
    Journal of Crystal Growth 290 (2006) 473-478
  4. Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off
    J.J. Schermer, G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J. van Deelen, A.T.J. van Niftrik, P.K. Larsen
    Thin Solid Films 511 (2006) 645-653
  5. Below bandgap transitions in an AlGaAN/GaN transistor heterostructure observed by photoreflectance spectroscopy
    R. Kudrawiec, M. Syperek, J. Misiewicz, M. Rudzinski, A.P. Grzegorczyk, P.R. Hageman , P.K. Larsen
    Physica Status Solidi (c) 6 (2006) 2117-2120
  6. Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD
    M. Rudziński, V. Desmaris, P.A. van Hal, J.L. Weyher, P.R. Hageman, K. Dynefors, T.C Rödle, H.F.F. Jos, H. Zirath , P.K. Larsen
    Physica Status Solidi (c), 6 (2006), 2231-2236
  7. Direct deposition of diamond films on steel using a three-step process
    M. Gowri, H. Li, J.J. Schermer, W.J.P. van Enckevort, J.J. ter Meulen
    Diamond and Related Materials 15 (2006) 498-501
  8. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
    E. Tengborn, M. Rummukainen, F. Tuomisto, K. Saarinen, M. Rudzinski, P.R. Hageman, P.K. Larsen, A. Nordlund
    Applied Physics Letters 89 (2006)
  9. Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
    V. Desmaris, M. Rudzinski, N. Rorsman, P.R. Hageman, P.K. Larsen, H. Zirath, T.C. Rodle , H.F.F. Jos
    IEEE Transactions on Electron Devices 53 (2006) 2413-2417
  10. Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods
    J.L. Weyher
    Superlattices and microstructures 40 (2006) 279-288
  11. Selective etching of dislocations in violet-laser diode structures
    G. Kamler, J. Smalc, M. Wozniak, J.L. Weyher, R. Czernecki, G. Targowski, M. Leszczynski, I. Grzegory, S. Porowski
    Journal of Crystal Growth 293 (2006) 18-21
  12. Etching, Raman and PL study of thick HVPE-grown GaN
    J.L. Weyher, R. Lewandowska, L. Macht, B. Lucznik, I. Grzegory
    Materials science in semiconductor processing 9 (2006) 175-179
  13. Direct deposition of diamond films on steel using a three-step process
    M. Gowri, H. Li, J.J. Schermer, W.J.P. van Enckevort, J.J. ter Meulen
    Diamond and Related Materials 15 (2006) 498-501
  14. Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy
    M. Motyka, M. Syperek, R. Kudrawiec, J. Misiewicz, M. Rudzinski, P.R. Hageman, P.K. Larsen
    Applied Physics Letters 89 (2006)
  15. Study of wet chemical etching of AlxGa1-xInP2 films using hydrochloric acid
    J. van Deelen, P. Mulder, G.J. Bauhuis, A.T.J. van Niftrik, E.J. Haverkamp, J. J. Schermer, P.K. Larsen
    Journal of the Electrochemical Society, 153 (2006) C442-C448
  16. Below band gap photoreflectance features in GaN layers and ALGaN/GaN transistor structures
    R. Kudrawiec, M. Syperek, J. Misiewicz, M. Rudzinksi, A.P. Grzegorczyk, P.R. Hageman, P.K. Larsen
    Physical Status Solidi (c) 6 (2006) 2117–2120
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