Publications 2007
- The influence of In(x)Ga(1-x) As and GaAs(1-y)P(y) layers surrounding the AlAs release layer in the epitaxial lift-off
A.T.J. van Niftrik, G.J. Bauhuis, J.J. Schermer, J. van Deelen, P. Mulder , P.K. Larsen
Crystal Growth & Design 7 (2007) 2472-2480
- A diffusion and reaction related model of the epitaxial lift-off process
A.T.J. van Niftrik, J.J. Schermer, G.J. Bauhuis, P. Mulder, P.K. Larsen , J.J. Kelly
Journal of the Electrochemical Society 154 (2007) D629-D635
- Screening effect in contactless elecrtoreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas
M. Motyka, R. Kudrawiec, M. Syperek, J. Misiewics, M. Rudziński, P.R. Hageman , P.K. Larsen
Thin Solid Films 515 (2007) 4662-4665
- Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance
M. Syperek, M. Motyka, R. Kudrawiec, J. Misiewicz, M. Rudzinski, P.R. Hageman, P.K. Larsen
Physica Status Solidi (c) 4 (2007) 366-368
- Anodic etching of SiC in alkaline solutions
D.H. van Dorp, J.L. Weyher, J.J. Kelly
Journal of Micromechanics and Microengenering 17 (2007) 50-55
- Orthodox etching of HVPE-grown GaN
J.L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R.J. Molnar, S. Müller, V.G.M. Sivel, G. Nowak, I. Grzegory
Journal of Crystal Growth 305 (2007) 384-39
- The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy
R. Lewandowska, J.L. Weyher, J. J. Kelly, L. Konczewicz , B. Lucznik
Journal of Crystal Growth 307 (2007) 298-301
- Defect-selective etching of semiconductors
J.L. Weyher, J.J. Kelly
Physica Status Solidi (c) 4 366-368 (2007)
- Scaling up a horizontal HVPE reactor
C.E.C. Dam, T. Bohnen, C.R. Kleijn, P.R. Hageman, P.K. Larsen
Surface & Coatings Technology 201 (2007) 8878-8883
- Optimum bandgap calculations for a 4-terminal double tandem III-V concentrator solar cell structure, proc. 22nd
G.M.M.W. Bissels, J.J. Schermer, E.J. Haverkamp, P. Mulder, G.J. Bauhuis
European Photovoltaic Solar Energy Conf 2007 (704-707)
- Multi junction spectral response measurement setup based on high power leds for subcell selection
E.J. Haverkamp, G.J. Bauhuis, G.M.M.W. Bissels, P. Mulder, J.J. Schermer
Proceedings 22nd European Photovoltaic Solar Energy Confernece Milaan Italy (2007) (276-279)
- Substrate reuse for solar celllsepitaxial llift-off of III-V
G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.J. Schermer
Proceedings 22 nd European Photovoltaic Solar Energy Conference Milaan (106-110)
- Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates
M. Rudzinski, E. Jezierska, J.L. Weyher, L. Macht, P.R. Hageman, J. Borysiuk, T.C. Rodle, H.F.F. Jos, P.K. Larsen
Physica status solidi (c) 204 (2007) 4230-4240
- Bias enhanced diamond nucleation on Mo and CrN coated
stainless steel substrates in a HFCVD reactor
H. Li, M. Gowri, J.J. Schermer, W.J.P. van Enckevort, T. Kacsich, J.J. ter Meulen
Diamond Related Materials 16 (2007) 1918-1923
- Influence of In on the growth mechanism of GaN in HVPE
C.E.C. Dam, P.R. Hageman, W.J.P. van Enckevort, T. Bohnen , P. K. Larsen
Journal of Crystal Growth 307 (2007) 19-25
- Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD
A.P. Grzegorczyk, J.L. Weyher, P.R. Hageman, P.K. Larsen
Thin Solid Films 516 (2007) 2314-2320
- Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates
J. Pernot, E. Bustarret, M. Rudziński, P.R. Hageman , P. K. Larsen
Journal of Applied Physics 101 (2007) 033536-033536-5
- P. C. Montgomery, J.L. Weyher, Jean-Pierre Gex
Omniscience L’erosion nanoscopique
Voir L’invisible (2007) 60-61
- Life-cycle assessment of thin film GaAs and GaInP/GaAs solar modules
N.J. Mohr, J.J. Schermer, M.A.J. Huijbregts, A. Meijer , L. Reijnders
Progress in Photovoltics 15 (2007), 163-179
- On the development of high efficiency thin-film GaAs and GaInP2 cells
J. van Deelen, G.J. Bauhuis, J.J. Schermer, P. Mulder, E.J. Haverkamp , P.K. Larsen
Journal of Crystal Growth 298 (2007) 772-776