Publications 2007

  1. The influence of In(x)Ga(1-x) As and GaAs(1-y)P(y) layers surrounding the AlAs release layer in the epitaxial lift-off
    A.T.J. van Niftrik, G.J. Bauhuis, J.J. Schermer, J. van Deelen, P. Mulder , P.K. Larsen
    Crystal Growth & Design 7 (2007) 2472-2480

  2. A diffusion and reaction related model of the epitaxial lift-off process
    A.T.J. van Niftrik, J.J. Schermer, G.J. Bauhuis, P. Mulder, P.K. Larsen , J.J. Kelly
    Journal of the  Electrochemical Society 154 (2007) D629-D635

  3. Screening effect in contactless elecrtoreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas
    M. Motyka, R. Kudrawiec, M. Syperek, J. Misiewics, M. Rudziński, P.R. Hageman , P.K. Larsen
    Thin Solid Films 515 (2007) 4662-4665

  4. Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance
    M. Syperek, M. Motyka, R. Kudrawiec, J. Misiewicz, M. Rudzinski, P.R. Hageman, P.K. Larsen
    Physica Status Solidi (c) 4 (2007) 366-368

  5. Anodic etching of SiC in alkaline solutions
    D.H. van Dorp, J.L. Weyher, J.J. Kelly
    Journal of Micromechanics and Microengenering 17 (2007) 50-55

  6. Orthodox etching of HVPE-grown GaN
    J.L. Weyher, S. Lazar, L. Macht, Z. Liliental-Weber, R.J. Molnar, S. Müller, V.G.M. Sivel, G. Nowak, I. Grzegory
    Journal of Crystal Growth 305 (2007) 384-39

  7. The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy
    R. Lewandowska, J.L. Weyher, J. J. Kelly, L. Konczewicz , B. Lucznik
    Journal of Crystal Growth 307 (2007) 298-301

  8. Defect-selective etching of semiconductors
    J.L. Weyher, J.J. Kelly
    Physica Status Solidi (c) 4 366-368 (2007)

  9. Scaling up a horizontal HVPE reactor
    C.E.C. Dam, T. Bohnen, C.R. Kleijn, P.R. Hageman, P.K. Larsen
    Surface & Coatings Technology 201 (2007) 8878-8883

  10. Optimum bandgap calculations for a 4-terminal double tandem III-V concentrator solar cell structure, proc. 22nd
    G.M.M.W. Bissels, J.J. Schermer, E.J. Haverkamp, P. Mulder, G.J. Bauhuis
    European Photovoltaic Solar Energy Conf 2007 (704-707)

  11. Multi junction spectral response measurement setup based on high power leds for subcell selection
    E.J. Haverkamp, G.J. Bauhuis, G.M.M.W. Bissels, P. Mulder, J.J. Schermer
    Proceedings 22nd European Photovoltaic Solar Energy Confernece Milaan Italy (2007) (276-279)

  12. Substrate reuse for solar celllsepitaxial llift-off of III-V
    G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.J. Schermer
    Proceedings 22 nd European Photovoltaic Solar Energy Conference Milaan (106-110)

  13. Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates
    M. Rudzinski, E. Jezierska, J.L. Weyher, L. Macht, P.R. Hageman, J. Borysiuk, T.C. Rodle, H.F.F. Jos, P.K. Larsen
    Physica status solidi (c) 204 (2007) 4230-4240

  14. Bias enhanced diamond nucleation on Mo and CrN coated
    stainless steel substrates in a HFCVD reactor
    H. Li, M. Gowri, J.J. Schermer, W.J.P. van Enckevort, T. Kacsich, J.J. ter Meulen
    Diamond Related Materials 16 (2007) 1918-1923

  15. Influence of In on the growth mechanism of GaN in HVPE
    C.E.C. Dam, P.R. Hageman, W.J.P. van Enckevort, T. Bohnen , P. K. Larsen
    Journal of Crystal Growth 307 (2007) 19-25

  16. Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD
    A.P. Grzegorczyk, J.L. Weyher, P.R. Hageman, P.K. Larsen
    Thin Solid Films 516 (2007) 2314-2320

  17. Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates
    J. Pernot, E. Bustarret, M. Rudziński, P.R. Hageman , P. K. Larsen
    Journal of Applied Physics 101 (2007) 033536-033536-5

  18. P. C. Montgomery, J.L. Weyher, Jean-Pierre Gex
    Omniscience L’erosion nanoscopique
    Voir L’invisible (2007) 60-61

  19. Life-cycle assessment of thin film GaAs and GaInP/GaAs solar modules
    N.J. Mohr, J.J. Schermer, M.A.J. Huijbregts, A. Meijer , L. Reijnders
    Progress in Photovoltics 15 (2007), 163-179

  20. On the development of high efficiency thin-film GaAs and GaInP2 cells
    J. van Deelen, G.J. Bauhuis, J.J. Schermer, P. Mulder, E.J. Haverkamp , P.K. Larsen
    Journal of Crystal Growth 298 (2007) 772-776