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Publications 2008

  1. The role of HF species and Dissolved oxygen on the epitaxial lift-off process of GaAs using AlAsP Release Layers
    A.T.J. van Niftrik, J.J. Schermer, G.J. Bauhuis, P. Mulder, P.K. Larsen, M.J. van Setten, J.J. Attema, N.C.G. Tan, J.J. Kelly
    Journal of Electrochem Society 155 (2008) D35-D39 
  2. HVPE of scandium nitride on 6H-SiC(0001)
    J.H. Edgar, T. Bohnen, P. R. Hageman
    Journal of Crystal Growth 310 (2008) 1075-1080
  3. Thick GaN layers grown by HVPE: Influence of the templates
    H Ashraf, J.L. Weyher, G.W.G. van Dreumel, A. Gzregorzyck , P.R. Hageman
    Journal of Crystal Growth 310 (2008) 3957-3963
  4. Influence of the Structural and Compositiional Properties of PECVD Silicon Nitride Layers on the Passivaton of AlGaN/GaN HRMT's. ECS Transactions
    F. Karouta, M.C.J.C.M. Krämer, J.J.M. Kwaspen, A. Grzegorczyk, P.R. Hageman, B. Hoex, W.M.M. Kessels, J. Klootwijk, E. Timmering, M.K. Smit
    ECS Transactions16 (2008) 181-191
  5. Output Power at S-band from 1 mm AlGaN/GaN HEMTs
    M.C.J.C.M Krämer, F. Karouta, J.J.M. Kwaspena, M. Rudzinski, P.K. Larsen, E.M. Suiker, P.A. de Hekc, T. Rödle, L. Volokhine, L.M.F. Kaufmann
    ECS Transactions 16 (2008) 169-179
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