Publications 2010

  1. Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
    G.W.G. van Dreumel, T. Bohnen, J.G. Buijnsters, J.J. ter Meulen, P.R. Hageman, W.J.P. van Enckevort , E. Vlieg
    Diamond and Related Materials 19 (2010) 437–440

  2. Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
    H. Ashraf, D.V. S. Rao, D. Gogova, D. Siche, R. Fornari, C.J Humphreys , P. R. Hageman
    Journal of Cryst. Growth 312 (2010) 595-600

  3. Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE
    T. Bohnen, H Ashraf, G.W. G. van Dreumel, S. Verhagen, P.R. Hageman , E. Vlieg
    Journal of Cryst. Growth 312 (2010) 2542 - 2550

  4. Solar Cells Characterization Using The IV Curve Method
    E.J. Haverkamp, Z. Drozdowicz, A. Smith
    Photonics Online The Magazine (2010) 6-9

  5. The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates
    T. Bohnen, G.W. G. van Dreumel, J. L. Weyher, W.J.P. van Enckevort, H. Ashraf, A.E.F. de Jong, P.R. Hageman , E. Vlieg
    Physica Status Solidi C 7 (2010) 1749-1755

  6. Properties and high quality, free-standing GaN substrates by exploiting thermal stress and study of spontaneous separation mechanism
    H. Ashraf, R. Kudrawiec, J. L. Weyher, J. Serafinczuk, J. Misiewicz , P. R. Hageman
    Journal of Crystal Growth 312 (2010) 2398-2403

  7. Interface state density of free-standing GaN Schottky diodes
    S.M. Faraz, H. Ashraf, M. Imran Arshad, P.R. Hageman, M. Asghar , Q. Wahab
    Semiconductor Science Technology 25 (2010) 095008

  8. Betere galliumnitride halfgeleiders door omgekeerde piramidedefecten
    T. Bohnen
    Nederlands tijdschrift voor natuurkunde 76 (2010) 338-341

  9. Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy
    H. Ashraf, M. Imran Arshad, S.M. Faraz, Q Wahab, P.R. Hagaman , M. Asghar
    Journal of Applied Physics 108 (2010) 103708

  10. Wafer reuse for repeated growth of III-V solar cells
    G.J. Bauhuis, P. Mulder, E.J. Haverkamp, J.J. Schermer, E. Bongers, G. Oomen, W. Köstler, G. Strobl
    Progress in Photovoltaics: Research and Applications 18 (2010) 155-159

  11. Scandium Aluminum Nitride Nanowires. Scandium: Compounds
    T Bohnen, G.W.G. van Dreumel, P.R. Hageman, G.R. Yazdi, R. Yakimova, E. Vlieg, R.E. Algra, M.A. Verheijen , J.H. Edgar
    Productions and Applications Chemical Engineering Methods and Technology Materials Science and Technologie (2010)