The first experimental data at 33.2 T !

The longitudinal and transversal conductivity of a GaAl/GaAlAs structure with two 2DEG separated by 2.5 nm barriers have been measuredat 340 mK up to 33.2 T. All systems have functioned excellent and the noise level on the current was about 10ppm. This low ripple, together with the very low vibration level in the laboratory when the whole installation is fully powered, made that no temperature change of the 3He was observed during a slow sweep or at constant high field. This result shows that the new laboratory is now fully operational and ready to use for experiments.