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Special seminar: "Atomic-scale investigation and modification of semiconductors” (Lecture)

Date
Tuesday 7 May 2019Add to my calendar
Time
from 16:00
Location
HG00.307
Speaker
Dr. Steven Schofield (London Centre for Nanotechnology, Faculty of Maths & Physical Sciences, UK)
Description

Steven SchofieldThe relentless miniaturisation of electronic devices has driven fundamental and technological research in semiconductor materials for over six decades. The atomic-scale manipulation capabilities of the scanning tunnelling microscope allow, in principle, the fabrication of devices atom by atom. Nevertheless, many practical challenges remain for the creation of functional devices at this ultimate length scale. Moreover, despite the exquisite understanding of bulk semiconductor properties, many fundamental characteristics are not well understood for semiconductor materials modified at the atomic-scale. In this talk I will present low temperature STM, tunnelling spectroscopy, and photoelectron spectroscopy data of silicon modified at the atomic-scale via STM manipulation, chemical deposition, and ion implantation. I will also discuss recent work investigating chemical impurities in black phosphorus and molybdenum disulphide (MoS2) and the resulting electronic structure changes in these materials.  These results are providing an atomic-scale viewpoint on the modification of semiconductor materials as required for the creation of future atomic-scale electronic components.

There will be an opportunity to discuss the seminar and other developments during an informal get-together directly afterwards.

We hope to see you there!

Contact
prof. Alex Khajetoorians